[1519PC Stock]
- Nimewo Pati:
- PMR280UN,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 20V 0.98A SOT416.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMR280UN,115 electronic components. PMR280UN,115 can be shipped within 24 hours after order. If you have any demands for PMR280UN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMR280UN,115 Atribi pwodwi yo
Nimewo Pati :
PMR280UN,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 20V 0.98A SOT416
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
980mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
340 mOhm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.89nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
45pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
530mW (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SC-75
Pake / Ka :
SC-75, SOT-416
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