Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N/P-CH 30V 4.5A/3A TSMT8
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A, 3A
RD sou (Max) @ Id, Vgs :
35 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
8.4nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
365pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
TSMT8