Nimewo Pati :
ZXMHN6A07T8TA
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 4N-CH 60V 1.4A SM8
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.4A
RD sou (Max) @ Id, Vgs :
300 mOhm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
166pF @ 40V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SM8