[299PC Stock]
- Nimewo Pati:
- ZXMHN6A07T8TA
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 4N-CH 60V 1.4A SM8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMHN6A07T8TA electronic components. ZXMHN6A07T8TA can be shipped within 24 hours after order. If you have any demands for ZXMHN6A07T8TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMHN6A07T8TA Atribi pwodwi yo
Nimewo Pati :
ZXMHN6A07T8TA
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 4N-CH 60V 1.4A SM8
Seri :
-
Estati Pati :
Active
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.4A
RD sou (Max) @ Id, Vgs :
300 mOhm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
166pF @ 40V
Pouvwa - Max :
1.6W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-223-8
Pake Aparèy Founisè :
SM8
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