IXYS - IXFH40N85X

KEY Part #: K6397586

IXFH40N85X Pricing (USD) [8595PC Stock]

  • 1 pcs$5.27077
  • 10 pcs$4.74458
  • 100 pcs$3.90121
  • 500 pcs$3.26857

Nimewo Pati:
IXFH40N85X
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET NCH 850V 40A TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFH40N85X electronic components. IXFH40N85X can be shipped within 24 hours after order. If you have any demands for IXFH40N85X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH40N85X Atribi pwodwi yo

Nimewo Pati : IXFH40N85X
Manifakti : IXYS
Deskripsyon : MOSFET NCH 850V 40A TO247
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 850V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 145 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 98nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 860W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247
Pake / Ka : TO-247-3

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