STL19N60M2 Pricing (USD) [65601PC Stock]
- 1 pcs$0.59902
- 3,000 pcs$0.59604
- Nimewo Pati:
- STL19N60M2
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET NCH 600V 11A POWERFLAT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STL19N60M2 electronic components. STL19N60M2 can be shipped within 24 hours after order. If you have any demands for STL19N60M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STL19N60M2 Atribi pwodwi yo
Nimewo Pati :
STL19N60M2
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET NCH 600V 11A POWERFLAT
Seri :
MDmesh™ M2
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
21.5nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
791pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
90W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerFlat™ (8x8) HV
Pake / Ka :
8-PowerVDFN
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