SIZ320DT-T1-GE3 Pricing (USD) [245327PC Stock]
- 1 pcs$0.15077
- Nimewo Pati:
- SIZ320DT-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 25V 30/40A 8POWER33.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIZ320DT-T1-GE3 electronic components. SIZ320DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ320DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ320DT-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIZ320DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 25V 30/40A 8POWER33
Seri :
PowerPAIR®, TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Tc), 40A (Tc)
RD sou (Max) @ Id, Vgs :
8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.9nC @ 4.5V, 11.9nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
660pF @ 12.5V, 1370pF @ 12.5V
Pouvwa - Max :
16.7W, 31W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerWDFN
Pake Aparèy Founisè :
8-Power33 (3x3)
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