Toshiba Semiconductor and Storage - TK12E60W,S1VX

KEY Part #: K6417656

TK12E60W,S1VX Pricing (USD) [37786PC Stock]

  • 1 pcs$1.20585
  • 50 pcs$1.19985

Nimewo Pati:
TK12E60W,S1VX
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N CH 600V 11.5A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK12E60W,S1VX electronic components. TK12E60W,S1VX can be shipped within 24 hours after order. If you have any demands for TK12E60W,S1VX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK12E60W,S1VX Atribi pwodwi yo

Nimewo Pati : TK12E60W,S1VX
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N CH 600V 11.5A TO-220
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 300 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 600µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 890pF @ 300V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 110W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220
Pake / Ka : TO-220-3

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