Toshiba Semiconductor and Storage - TPWR8004PL,L1Q

KEY Part #: K6418092

TPWR8004PL,L1Q Pricing (USD) [51384PC Stock]

  • 1 pcs$0.76912
  • 5,000 pcs$0.76529

Nimewo Pati:
TPWR8004PL,L1Q
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 40V 150A 8DSOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TPWR8004PL,L1Q electronic components. TPWR8004PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPWR8004PL,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPWR8004PL,L1Q Atribi pwodwi yo

Nimewo Pati : TPWR8004PL,L1Q
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 40V 150A 8DSOP
Seri : U-MOSIX-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 150A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 0.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 103nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 9600pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Ta), 170W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-DSOP Advance
Pake / Ka : 8-PowerVDFN