Infineon Technologies - BSC196N10NSGATMA1

KEY Part #: K6420426

BSC196N10NSGATMA1 Pricing (USD) [194119PC Stock]

  • 1 pcs$0.19054
  • 5,000 pcs$0.18290

Nimewo Pati:
BSC196N10NSGATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 45A TDSON-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC196N10NSGATMA1 Atribi pwodwi yo

Nimewo Pati : BSC196N10NSGATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 45A TDSON-8
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.5A (Ta), 45A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 19.6 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id : 4V @ 42µA
Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2300pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 78W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TDSON-8
Pake / Ka : 8-PowerTDFN