[1184PC Stock]
- Nimewo Pati:
- IRFH5300TR2PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 40A PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFH5300TR2PBF electronic components. IRFH5300TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH5300TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5300TR2PBF Atribi pwodwi yo
Nimewo Pati :
IRFH5300TR2PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 40A PQFN
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Ta), 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.4 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7200pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.6W (Ta), 250W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PQFN (5x6) Single Die
Pake / Ka :
8-PowerVDFN
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