IXYS - IXFK170N20T

KEY Part #: K6398481

IXFK170N20T Pricing (USD) [8061PC Stock]

  • 1 pcs$5.87894
  • 10 pcs$5.29104
  • 100 pcs$4.35041
  • 500 pcs$3.64494

Nimewo Pati:
IXFK170N20T
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 200V 170A TO-264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in IXYS IXFK170N20T electronic components. IXFK170N20T can be shipped within 24 hours after order. If you have any demands for IXFK170N20T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFK170N20T Atribi pwodwi yo

Nimewo Pati : IXFK170N20T
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 200V 170A TO-264
Seri : GigaMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 170A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 11 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 265nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 19600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1150W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-264AA (IXFK)
Pake / Ka : TO-264-3, TO-264AA

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