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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. CZDM1003N TR

Central Semiconductor Corp - CZDM1003N TR

KEY Part #: K6402910

CZDM1003N TR Pricing (USD) [2540PC Stock]

  • 1,000 pcs$0.13922
Nimewo Pati:
CZDM1003N TR
Manifakti:
Central Semiconductor Corp
Detaye deskripsyon:
MOSFET N-CH 100V 3A SOT-223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Diodes - Bridge rèktifikateur, Modil pouvwa chofè and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Central Semiconductor Corp CZDM1003N TR electronic components. CZDM1003N TR can be shipped within 24 hours after order. If you have any demands for CZDM1003N TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CZDM1003N TR Atribi pwodwi yo

Nimewo Pati : CZDM1003N TR
Manifakti : Central Semiconductor Corp
Deskripsyon : MOSFET N-CH 100V 3A SOT-223
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 150 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : 20V
Antre kapasite (Ciss) (Max) @ Vds : 975pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-223
Pake / Ka : TO-261-4, TO-261AA
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