SQ4532AEY-T1_GE3 Pricing (USD) [246141PC Stock]
- 1 pcs$0.15027
- Nimewo Pati:
- SQ4532AEY-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 30V 7.3/5.3A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQ4532AEY-T1_GE3 electronic components. SQ4532AEY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4532AEY-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ4532AEY-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQ4532AEY-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.3A (Tc), 5.3A (Tc)
RD sou (Max) @ Id, Vgs :
31 mOhm @ 4.9A, 10V, 70 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.8nC @ 10V, 10.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
535pF @ 15V, 528pF @ 15V
Pouvwa - Max :
3.3W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC
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