IXTQ88N30P Pricing (USD) [10219PC Stock]
- 1 pcs$4.43785
- 10 pcs$3.99230
- 100 pcs$3.28238
- 500 pcs$2.75010
- Nimewo Pati:
- IXTQ88N30P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 300V 88A TO-3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Tiristors - SCR - Modil yo, Diodes - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXTQ88N30P electronic components. IXTQ88N30P can be shipped within 24 hours after order. If you have any demands for IXTQ88N30P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTQ88N30P Atribi pwodwi yo
Nimewo Pati :
IXTQ88N30P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 300V 88A TO-3P
Seri :
PolarHT™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
88A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
40 mOhm @ 44A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
6300pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
600W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P
Pake / Ka :
TO-3P-3, SC-65-3
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