DMG4800LSD-13 Pricing (USD) [409104PC Stock]
- 1 pcs$0.09041
- 2,500 pcs$0.08092
- Nimewo Pati:
- DMG4800LSD-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 7.5A 8SO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMG4800LSD-13 electronic components. DMG4800LSD-13 can be shipped within 24 hours after order. If you have any demands for DMG4800LSD-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG4800LSD-13 Atribi pwodwi yo
Nimewo Pati :
DMG4800LSD-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 30V 7.5A 8SO
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.5A
RD sou (Max) @ Id, Vgs :
16 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
1.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.56nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
798pF @ 10V
Pouvwa - Max :
1.17W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOP
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