PSMN011-80YS,115 Pricing (USD) [177123PC Stock]
- 1 pcs$0.20987
- 1,500 pcs$0.20882
- Nimewo Pati:
- PSMN011-80YS,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 80V LFPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Tiristors - SCR - Modil yo and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PSMN011-80YS,115 electronic components. PSMN011-80YS,115 can be shipped within 24 hours after order. If you have any demands for PSMN011-80YS,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN011-80YS,115 Atribi pwodwi yo
Nimewo Pati :
PSMN011-80YS,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 80V LFPAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
67A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
11 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2800pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
117W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LFPAK56, Power-SO8
Pake / Ka :
SC-100, SOT-669
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