Vishay Siliconix - SI8823EDB-T2-E1

KEY Part #: K6397563

SI8823EDB-T2-E1 Pricing (USD) [767890PC Stock]

  • 1 pcs$0.04841
  • 3,000 pcs$0.04817

Nimewo Pati:
SI8823EDB-T2-E1
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 20V 2.7A 4-MICROFOOT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI8823EDB-T2-E1 electronic components. SI8823EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8823EDB-T2-E1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI8823EDB-T2-E1 Atribi pwodwi yo

Nimewo Pati : SI8823EDB-T2-E1
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 20V 2.7A 4-MICROFOOT
Seri : TrenchFET® Gen III
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 95 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : 800mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 580pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 900mW (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 4-MICRO FOOT® (0.8x0.8)
Pake / Ka : 4-XFBGA

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