DMN3013LDG-7 Pricing (USD) [235979PC Stock]
- 1 pcs$0.15674
- Nimewo Pati:
- DMN3013LDG-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET BVDSS 25V-30V POWERDI333.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN3013LDG-7 electronic components. DMN3013LDG-7 can be shipped within 24 hours after order. If you have any demands for DMN3013LDG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3013LDG-7 Atribi pwodwi yo
Nimewo Pati :
DMN3013LDG-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 25V-30V POWERDI333
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.5A (Ta), 15A (Tc)
RD sou (Max) @ Id, Vgs :
14.3 mOhm @ 4A, 8V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5.7nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
600pF @ 15V
Pouvwa - Max :
2.16W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerLDFN
Pake Aparèy Founisè :
PowerDI3333-8
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