AUIRF7647S2TR Pricing (USD) [138633PC Stock]
- 1 pcs$0.26680
- 4,800 pcs$0.24476
- Nimewo Pati:
- AUIRF7647S2TR
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 5.9A DIRECTFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies AUIRF7647S2TR electronic components. AUIRF7647S2TR can be shipped within 24 hours after order. If you have any demands for AUIRF7647S2TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AUIRF7647S2TR Atribi pwodwi yo
Nimewo Pati :
AUIRF7647S2TR
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 5.9A DIRECTFET
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.9A (Ta), 24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
31 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id :
5V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
910pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 41W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET™ SC
Pake / Ka :
DirectFET™ Isometric SC
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