ON Semiconductor - MMFT5P03HDT1

KEY Part #: K6412570

[13400PC Stock]


    Nimewo Pati:
    MMFT5P03HDT1
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET P-CH 30V 3.7A SOT223.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - JFETs and Transistors - Bipolè (BJT) - Arrays ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor MMFT5P03HDT1 electronic components. MMFT5P03HDT1 can be shipped within 24 hours after order. If you have any demands for MMFT5P03HDT1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MMFT5P03HDT1 Atribi pwodwi yo

    Nimewo Pati : MMFT5P03HDT1
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET P-CH 30V 3.7A SOT223
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.7A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 100 mOhm @ 5.2A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 24nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 950pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.56W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SOT-223
    Pake / Ka : TO-261-4, TO-261AA