Infineon Technologies - IRF7101TRPBF

KEY Part #: K6523200

IRF7101TRPBF Pricing (USD) [220599PC Stock]

  • 1 pcs$0.16767
  • 4,000 pcs$0.14383

Nimewo Pati:
IRF7101TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET 2N-CH 20V 3.5A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRF7101TRPBF electronic components. IRF7101TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7101TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF7101TRPBF Atribi pwodwi yo

Nimewo Pati : IRF7101TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET 2N-CH 20V 3.5A 8-SOIC
Seri : HEXFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.5A
RD sou (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 320pF @ 15V
Pouvwa - Max : 2W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO