TK6A80E,S4X Pricing (USD) [49481PC Stock]
- 1 pcs$0.86965
- 50 pcs$0.70249
- 100 pcs$0.63225
- 500 pcs$0.49176
- 1,000 pcs$0.40746
- Nimewo Pati:
- TK6A80E,S4X
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 800V TO220SIS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK6A80E,S4X electronic components. TK6A80E,S4X can be shipped within 24 hours after order. If you have any demands for TK6A80E,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK6A80E,S4X Atribi pwodwi yo
Nimewo Pati :
TK6A80E,S4X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 800V TO220SIS
Seri :
π-MOSVIII
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.7 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 600µA
Chaje Gate (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1350pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
45W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220SIS
Pake / Ka :
TO-220-3 Full Pack
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