IPP80P03P4L04AKSA1 Pricing (USD) [39129PC Stock]
- 1 pcs$0.91564
- 10 pcs$0.82658
- 100 pcs$0.66424
- 500 pcs$0.51663
- 1,000 pcs$0.42806
- Nimewo Pati:
- IPP80P03P4L04AKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 30V 80A TO220-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Diodes - RF, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPP80P03P4L04AKSA1 electronic components. IPP80P03P4L04AKSA1 can be shipped within 24 hours after order. If you have any demands for IPP80P03P4L04AKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP80P03P4L04AKSA1 Atribi pwodwi yo
Nimewo Pati :
IPP80P03P4L04AKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 30V 80A TO220-3
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4.4 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2V @ 253µA
Chaje Gate (Qg) (Max) @ Vgs :
160nC @ 10V
Vgs (Max) :
+5V, -16V
Antre kapasite (Ciss) (Max) @ Vds :
11300pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
137W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3-1
Pake / Ka :
TO-220-3
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