Nimewo Pati :
APTC60HM45SCTG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 4N-CH 600V 49A SP4
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Super Junction
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
49A
RD sou (Max) @ Id, Vgs :
45 mOhm @ 22.5A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs :
150nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
7200pF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP4