Nimewo Pati :
SPW55N80C3FKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 800V 54.9A TO-247
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
54.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
85 mOhm @ 32.6A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 3.3mA
Chaje Gate (Qg) (Max) @ Vgs :
288nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
7520pF @ 100V
Disipasyon Pouvwa (Max) :
500W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO247-3