PMDPB55XP,115 Pricing (USD) [273990PC Stock]
- 1 pcs$0.13500
- 3,000 pcs$0.11670
- Nimewo Pati:
- PMDPB55XP,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET 2P-CH 20V 3.4A 6HUSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMDPB55XP,115 electronic components. PMDPB55XP,115 can be shipped within 24 hours after order. If you have any demands for PMDPB55XP,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDPB55XP,115 Atribi pwodwi yo
Nimewo Pati :
PMDPB55XP,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2P-CH 20V 3.4A 6HUSON
Seri :
-
Estati Pati :
Active
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.4A
RD sou (Max) @ Id, Vgs :
70 mOhm @ 3.4A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
785pF @ 10V
Pouvwa - Max :
490mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-UDFN Exposed Pad
Pake Aparèy Founisè :
6-HUSON-EP (2x2)
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