[7943PC Stock]
- Nimewo Pati:
- 2SJ665-DL-1EX
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 100V 27A TO263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Diodes - Zener - Single, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor 2SJ665-DL-1EX electronic components. 2SJ665-DL-1EX can be shipped within 24 hours after order. If you have any demands for 2SJ665-DL-1EX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SJ665-DL-1EX Atribi pwodwi yo
Nimewo Pati :
2SJ665-DL-1EX
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 100V 27A TO263
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
27A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
77 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
74nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4200pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
65W (Tc)
Operating Tanperati :
150°C (TA)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263-2
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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