[12416PC Stock]
- Nimewo Pati:
- STL80N3LLH6
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 30V 21A POWERFLAT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STL80N3LLH6 electronic components. STL80N3LLH6 can be shipped within 24 hours after order. If you have any demands for STL80N3LLH6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STL80N3LLH6 Atribi pwodwi yo
Nimewo Pati :
STL80N3LLH6
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 30V 21A POWERFLAT
Seri :
DeepGATE™, STripFET™ VI
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5.2 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1690pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
60W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerFlat™ (5x6)
Pake / Ka :
8-PowerVDFN
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