Vishay Siliconix - SQJ951EP-T1_GE3

KEY Part #: K6525215

SQJ951EP-T1_GE3 Pricing (USD) [133641PC Stock]

  • 1 pcs$0.27677
  • 3,000 pcs$0.23388

Nimewo Pati:
SQJ951EP-T1_GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2P-CH 30V 30A PPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Diodes - Zener - Single, Transistors - IGBTs - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SQJ951EP-T1_GE3 electronic components. SQJ951EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ951EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ951EP-T1_GE3 Atribi pwodwi yo

Nimewo Pati : SQJ951EP-T1_GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2P-CH 30V 30A PPAK
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A
RD sou (Max) @ Id, Vgs : 17 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1680pF @ 10V
Pouvwa - Max : 56W
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® SO-8 Dual
Pake Aparèy Founisè : PowerPAK® SO-8 Dual

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