Diodes Incorporated - DMN3300U-7

KEY Part #: K6417563

DMN3300U-7 Pricing (USD) [618813PC Stock]

  • 1 pcs$0.07116
  • 3,000 pcs$0.07081

Nimewo Pati:
DMN3300U-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 30V 2A SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Transistors - JFETs, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN3300U-7 electronic components. DMN3300U-7 can be shipped within 24 hours after order. If you have any demands for DMN3300U-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3300U-7 Atribi pwodwi yo

Nimewo Pati : DMN3300U-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 30V 2A SOT23-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 150 mOhm @ 4.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 193pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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