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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FQB7P20TM-F085

ON Semiconductor - FQB7P20TM-F085

KEY Part #: K6418955

FQB7P20TM-F085 Pricing (USD) [84433PC Stock]

  • 1 pcs$0.46310
Nimewo Pati:
FQB7P20TM-F085
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 200V 7.3A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor FQB7P20TM-F085 electronic components. FQB7P20TM-F085 can be shipped within 24 hours after order. If you have any demands for FQB7P20TM-F085, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQB7P20TM-F085 Atribi pwodwi yo

Nimewo Pati : FQB7P20TM-F085
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 200V 7.3A D2PAK
Seri : Automotive, AEC-Q101, QFET®
Estati Pati : Not For New Designs
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 690 mOhm @ 3.65A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 770pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.13W (Ta), 90W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263AB)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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