Nimewo Pati :
SIA814DJ-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 30V 4.5A SC70-6
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 10V
RD sou (Max) @ Id, Vgs :
61 mOhm @ 3.3A, 10V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
340pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
1.9W (Ta), 6.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SC-70-6 Dual
Pake / Ka :
PowerPAK® SC-70-6 Dual