Vishay Siliconix - SIA814DJ-T1-GE3

KEY Part #: K6407818

[842PC Stock]


    Nimewo Pati:
    SIA814DJ-T1-GE3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 30V 4.5A SC70-6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SIA814DJ-T1-GE3 electronic components. SIA814DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA814DJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIA814DJ-T1-GE3 Atribi pwodwi yo

    Nimewo Pati : SIA814DJ-T1-GE3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 30V 4.5A SC70-6
    Seri : LITTLE FOOT®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 10V
    RD sou (Max) @ Id, Vgs : 61 mOhm @ 3.3A, 10V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 10V
    Vgs (Max) : ±12V
    Antre kapasite (Ciss) (Max) @ Vds : 340pF @ 10V
    Karakteristik FET : Schottky Diode (Isolated)
    Disipasyon Pouvwa (Max) : 1.9W (Ta), 6.5W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PowerPAK® SC-70-6 Dual
    Pake / Ka : PowerPAK® SC-70-6 Dual

    Ou ka enterese tou