IXTP3N110 Pricing (USD) [16291PC Stock]
- 1 pcs$2.92361
- 50 pcs$2.90906
- Nimewo Pati:
- IXTP3N110
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1100V 3A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTP3N110 electronic components. IXTP3N110 can be shipped within 24 hours after order. If you have any demands for IXTP3N110, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP3N110 Atribi pwodwi yo
Nimewo Pati :
IXTP3N110
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1100V 3A TO-220
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1350pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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