Infineon Technologies - BSO220N03MDGXUMA1

KEY Part #: K6524908

BSO220N03MDGXUMA1 Pricing (USD) [237610PC Stock]

  • 1 pcs$0.15566

Nimewo Pati:
BSO220N03MDGXUMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET 2N-CH 30V 6A 8DSO.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single and Tiristors - SCR ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSO220N03MDGXUMA1 Atribi pwodwi yo

Nimewo Pati : BSO220N03MDGXUMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET 2N-CH 30V 6A 8DSO
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A
RD sou (Max) @ Id, Vgs : 22 mOhm @ 7.7A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 15V
Pouvwa - Max : 1.4W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : PG-DSO-8