[12664PC Stock]
- Nimewo Pati:
- IRF7204
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 20V 5.3A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7204 electronic components. IRF7204 can be shipped within 24 hours after order. If you have any demands for IRF7204, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7204 Atribi pwodwi yo
Nimewo Pati :
IRF7204
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 20V 5.3A 8-SOIC
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
60 mOhm @ 5.3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
860pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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