Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N/P-CH 20V 0.1A VMT6
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate, 1.2V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100mA
RD sou (Max) @ Id, Vgs :
3.5 Ohm @ 100mA, 4.5V
Vgs (th) (Max) @ Id :
1V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
7.1pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-SMD, Flat Leads
Pake Aparèy Founisè :
VMT6