Toshiba Semiconductor and Storage - TK4R3A06PL,S4X

KEY Part #: K6398879

TK4R3A06PL,S4X Pricing (USD) [47232PC Stock]

  • 1 pcs$0.91146
  • 50 pcs$0.73469
  • 100 pcs$0.66123
  • 500 pcs$0.51430
  • 1,000 pcs$0.42613

Nimewo Pati:
TK4R3A06PL,S4X
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
X35 PB-F POWER MOSFET TRANSISTOR.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK4R3A06PL,S4X electronic components. TK4R3A06PL,S4X can be shipped within 24 hours after order. If you have any demands for TK4R3A06PL,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK4R3A06PL,S4X Atribi pwodwi yo

Nimewo Pati : TK4R3A06PL,S4X
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : X35 PB-F POWER MOSFET TRANSISTOR
Seri : U-MOSIX-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 68A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 7.2 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id : 2.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 48.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3280pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 36W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220SIS
Pake / Ka : TO-220-3 Full Pack

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