IRFD120PBF Pricing (USD) [90796PC Stock]
- 1 pcs$0.44319
- 10 pcs$0.38632
- 100 pcs$0.28191
- 500 pcs$0.20882
- 1,000 pcs$0.16706
- Nimewo Pati:
- IRFD120PBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 100V 1.3A 4-DIP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFD120PBF electronic components. IRFD120PBF can be shipped within 24 hours after order. If you have any demands for IRFD120PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD120PBF Atribi pwodwi yo
Nimewo Pati :
IRFD120PBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 100V 1.3A 4-DIP
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
270 mOhm @ 780mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
360pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.3W (Ta)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
4-DIP, Hexdip, HVMDIP
Pake / Ka :
4-DIP (0.300", 7.62mm)
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