IRFL014NTRPBF Pricing (USD) [305674PC Stock]
- 1 pcs$0.12100
- 2,500 pcs$0.09645
- Nimewo Pati:
- IRFL014NTRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 55V 1.9A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFL014NTRPBF electronic components. IRFL014NTRPBF can be shipped within 24 hours after order. If you have any demands for IRFL014NTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFL014NTRPBF Atribi pwodwi yo
Nimewo Pati :
IRFL014NTRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 55V 1.9A SOT223
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
160 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
190pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA
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