Infineon Technologies - BSP129H6327XTSA1

KEY Part #: K6399798

BSP129H6327XTSA1 Pricing (USD) [244941PC Stock]

  • 1 pcs$0.15101
  • 1,000 pcs$0.13079

Nimewo Pati:
BSP129H6327XTSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 240V 350MA SOT223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP129H6327XTSA1 Atribi pwodwi yo

Nimewo Pati : BSP129H6327XTSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 240V 350MA SOT223
Seri : SIPMOS®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 240V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 350mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 0V, 10V
RD sou (Max) @ Id, Vgs : 6 Ohm @ 350mA, 10V
Vgs (th) (Max) @ Id : 1V @ 108µA
Chaje Gate (Qg) (Max) @ Vgs : 5.7nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 108pF @ 25V
Karakteristik FET : Depletion Mode
Disipasyon Pouvwa (Max) : 1.8W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-SOT223-4
Pake / Ka : TO-261-4, TO-261AA