SI8900EDB-T2-E1 Pricing (USD) [54394PC Stock]
- 1 pcs$0.71884
- 3,000 pcs$0.67285
- Nimewo Pati:
- SI8900EDB-T2-E1
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 5.4A 10-MFP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI8900EDB-T2-E1 electronic components. SI8900EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8900EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8900EDB-T2-E1 Atribi pwodwi yo
Nimewo Pati :
SI8900EDB-T2-E1
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 20V 5.4A 10-MFP
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.4A
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
1V @ 1.1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
10-UFBGA, CSPBGA
Pake Aparèy Founisè :
10-Micro Foot™ CSP (2x5)
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