PMPB85ENEAX Pricing (USD) [427116PC Stock]
- 1 pcs$0.09149
- 3,000 pcs$0.09104
- Nimewo Pati:
- PMPB85ENEAX
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 60V 3A SOT1220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - JFETs, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMPB85ENEAX electronic components. PMPB85ENEAX can be shipped within 24 hours after order. If you have any demands for PMPB85ENEAX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB85ENEAX Atribi pwodwi yo
Nimewo Pati :
PMPB85ENEAX
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 60V 3A SOT1220
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
95 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
305pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.6W (Ta), 15.6W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN2020MD-6
Pake / Ka :
6-UDFN Exposed Pad
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