PMDXB1200UPEZ Pricing (USD) [836131PC Stock]
- 1 pcs$0.04446
- 5,000 pcs$0.04424
- Nimewo Pati:
- PMDXB1200UPEZ
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET 2P-CH 30V 0.41A 6DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMDXB1200UPEZ electronic components. PMDXB1200UPEZ can be shipped within 24 hours after order. If you have any demands for PMDXB1200UPEZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDXB1200UPEZ Atribi pwodwi yo
Nimewo Pati :
PMDXB1200UPEZ
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2P-CH 30V 0.41A 6DFN
Seri :
-
Estati Pati :
Active
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
410mA
RD sou (Max) @ Id, Vgs :
1.4 Ohm @ 410mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
43.2pF @ 15V
Pouvwa - Max :
285mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-XFDFN Exposed Pad
Pake Aparèy Founisè :
DFN1010B-6
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