FDMS86101A Pricing (USD) [76334PC Stock]
- 1 pcs$0.51479
- 3,000 pcs$0.51223
- Nimewo Pati:
- FDMS86101A
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 13A POWER56.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Modil pouvwa chofè and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDMS86101A electronic components. FDMS86101A can be shipped within 24 hours after order. If you have any demands for FDMS86101A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDMS86101A Atribi pwodwi yo
Nimewo Pati :
FDMS86101A
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 13A POWER56
Seri :
PowerTrench®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
13A (Ta), 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
8 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
58nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4120pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PQFN (5x6)
Pake / Ka :
8-PowerTDFN
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