Transphorm - TPH3208PD

KEY Part #: K6398093

TPH3208PD Pricing (USD) [8659PC Stock]

  • 1 pcs$4.75956

Nimewo Pati:
TPH3208PD
Manifakti:
Transphorm
Detaye deskripsyon:
GANFET N-CH 650V 20A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in Transphorm TPH3208PD electronic components. TPH3208PD can be shipped within 24 hours after order. If you have any demands for TPH3208PD, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPH3208PD Atribi pwodwi yo

Nimewo Pati : TPH3208PD
Manifakti : Transphorm
Deskripsyon : GANFET N-CH 650V 20A TO220
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V
Vgs (th) (Max) @ Id : 2.6V @ 300µA
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Antre kapasite (Ciss) (Max) @ Vds : 760pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 96W (Tc)
Operating Tanperati : -55°C ~ 150°C
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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