Infineon Technologies - IPA60R330P6XKSA1

KEY Part #: K6402350

IPA60R330P6XKSA1 Pricing (USD) [2734PC Stock]

  • 1 pcs$0.86547
  • 10 pcs$0.78185
  • 100 pcs$0.62824

Nimewo Pati:
IPA60R330P6XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 600V 12A TO220FP-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA60R330P6XKSA1 Atribi pwodwi yo

Nimewo Pati : IPA60R330P6XKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 600V 12A TO220FP-3
Seri : CoolMOS™ P6
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 330 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 370µA
Chaje Gate (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1010pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 32W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-FP
Pake / Ka : TO-220-3 Full Pack