BSS126H6327XTSA2 Pricing (USD) [540554PC Stock]
- 1 pcs$0.06843
- 3,000 pcs$0.05312
- Nimewo Pati:
- BSS126H6327XTSA2
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 600V 0.021A SOT-23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSS126H6327XTSA2 electronic components. BSS126H6327XTSA2 can be shipped within 24 hours after order. If you have any demands for BSS126H6327XTSA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS126H6327XTSA2 Atribi pwodwi yo
Nimewo Pati :
BSS126H6327XTSA2
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 600V 0.021A SOT-23
Seri :
SIPMOS®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
0V, 10V
RD sou (Max) @ Id, Vgs :
500 Ohm @ 16mA, 10V
Vgs (th) (Max) @ Id :
1.6V @ 8µA
Chaje Gate (Qg) (Max) @ Vgs :
2.1nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
28pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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