Infineon Technologies - IPP50R280CEXKSA1

KEY Part #: K6400397

IPP50R280CEXKSA1 Pricing (USD) [58817PC Stock]

  • 1 pcs$0.58116
  • 10 pcs$0.51594
  • 100 pcs$0.40790
  • 500 pcs$0.29923
  • 1,000 pcs$0.23623

Nimewo Pati:
IPP50R280CEXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 500V 13A PG-TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPP50R280CEXKSA1 electronic components. IPP50R280CEXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP50R280CEXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP50R280CEXKSA1 Atribi pwodwi yo

Nimewo Pati : IPP50R280CEXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 500V 13A PG-TO220
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 13V
RD sou (Max) @ Id, Vgs : 280 mOhm @ 4.2A, 13V
Vgs (th) (Max) @ Id : 3.5V @ 350µA
Chaje Gate (Qg) (Max) @ Vgs : 32.6nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 773pF @ 100V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 92W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3-1
Pake / Ka : TO-220-3