VMO1200-01F Pricing (USD) [623PC Stock]
- 1 pcs$78.23939
- 10 pcs$73.12420
- 25 pcs$70.56740
- Nimewo Pati:
- VMO1200-01F
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 1245A Y3-LI.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - RF and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS VMO1200-01F electronic components. VMO1200-01F can be shipped within 24 hours after order. If you have any demands for VMO1200-01F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VMO1200-01F Atribi pwodwi yo
Nimewo Pati :
VMO1200-01F
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 1245A Y3-LI
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1220A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.35 mOhm @ 932A, 10V
Vgs (th) (Max) @ Id :
4V @ 64mA
Chaje Gate (Qg) (Max) @ Vgs :
2520nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Y3-Li
Pake / Ka :
Y3-Li
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