[2605PC Stock]
- Nimewo Pati:
- APT40SM120B
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET N-CH 1200V 41A TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT40SM120B electronic components. APT40SM120B can be shipped within 24 hours after order. If you have any demands for APT40SM120B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT40SM120B Atribi pwodwi yo
Nimewo Pati :
APT40SM120B
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET N-CH 1200V 41A TO247
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
41A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 20A, 20V
Vgs (th) (Max) @ Id :
3V @ 1mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs :
130nC @ 20V
Vgs (Max) :
+25V, -10V
Antre kapasite (Ciss) (Max) @ Vds :
2560pF @ 1000V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
273W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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